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SW2N40DC - N-channel MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • Low RDS(ON) (Typ 2.8Ω)@VGS=10V.
  • Low Gate Charge (Typ 6.8nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW2N40DC
Manufacturer Samwin
File Size 828.27 KB
Description N-channel MOSFET
Datasheet download datasheet SW2N40DC Datasheet

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Full PDF Text Transcription

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SW2N40DC N-channel Enhanced mode TO-251S/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 2.8Ω)@VGS=10V  Low Gate Charge (Typ 6.8nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:DC-DC,LED TO-251S TO-252 12 3 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 400V ID : 2A RDS(ON) : 2.
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