SW20N60
Features
- High ruggedness MOSFET
- RDS(ON) (Max 0.3Ω)@VGS=10V
- Gate Charge (Max 80 n C)
- Improved dv/dt Capability
- 100% Avalanche Tested
TO-3P
BVDSS : 600V ID : 20A- RDS(ON) : 0.3ohm
2 3 1
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast based on half bridge.
Order Codes
Item 1 Sales Type SW W 20N60 Marking SW20N60 Package TO-3P Packaging TUBE
Absolute maximum ratings
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed...
