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SW2N65 - N-channel MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 5.0 Ω)@VGS=10V.
  • Gate Charge (Max 8nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220F TO-220 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW2N65
Manufacturer SAMWIN
File Size 826.05 KB
Description N-channel MOSFET
Datasheet download datasheet SW2N65 Datasheet

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Full PDF Text Transcription

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SAMWIN SW2N65 N-channel MOSFET BVDSS : 650V ID : 2.0A RDS(ON) : 5.0ohm 2 1 2 1 3 2 3 1 Features ■ High ruggedness ■ RDS(ON) (Max 5.0 Ω)@VGS=10V ■ Gate Charge (Max 8nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor.
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