Datasheet4U Logo Datasheet4U.com

SW2N70 - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 7 Ω)@VGS=10V.
  • Gate Charge (Max 5nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-251 TO-252 12 3 2 1 3 1. Gate 2. Drain 3. Source General.

📥 Download Datasheet

Datasheet Details

Part number SW2N70
Manufacturer SEMIPOWER
File Size 721.23 KB
Description MOSFET
Datasheet download datasheet SW2N70 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SW2N40DC N-channel MOSFET Samwin
SW2N60 power MOSFET Samwin
SW2N65 N-channel MOSFET SAMWIN
SW2N65B N-channel MOSFET SAMWIN
SW201 Quad SPST JFET Analog Switches Analog Devices

Other Datasheets by SEMIPOWER

Part Number Description
SW2N10 MOSFET
SW2N60D MOSFET
SW20N50U MOSFET
SW20N60U MOSFET
SW20N65K MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SAMWIN SW2N70 Features ■ High ruggedness ■ RDS(ON) (Max 7 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 TO-252 12 3 2 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS.
Published: |