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STB5NB80
N - CHANNEL 800V - 1.8Ω - 5A - D2PAK PowerMESH™ MOSFET
TYPE ST B5NB80
s s s s s s
V DSS 800 V
R DS(on) < 2.2 Ω
ID 5 A
D2PAK TO-263 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the INTERNAL SCHEMATIC DIAGRAM lowest RDS(on) per area, exceptional avalanche DataSheet4U.com and dv/dt capabilities and unrivalled gate charge and switching characteristics.