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STB5NB60
N - CHANNEL 600V - 1.8Ω - 5A - I2PAK/D2PAK PowerMESH™ MOSFET
TYPE ST B5NB60
s s s s s
V DSS 600 V
R DS(on) < 2.0 Ω
ID 5 A
TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 12
3 1
DESCRIPTION Using the latest high voltage MESH OVERLAY™ I2PAK D2PAK process, STMicroelectronics has designed an TO-262 TO-263 advanced family of power MOSFETs with (Suffix ”T4”) (suffix ”-1”) outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics.
STB5NB60 Datasheet
