STB5NA50
..
- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STB5NA50 n n n n n n n n
V DSS 500 V
R DS(on ) < 1.6 Ω
ID 5 A n
TYPICAL RDS(on) = 1.2 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)
3 12
I2PAK TO-262
D2PAK TO-263
APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLIES (SMPS) INTERNAL SCHEMATIC DIAGRAM . n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
Data Sh ee
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR V GS ID ID I DM (
- ) P tot T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain...
