STB5N62K3
Features
Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3
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- -
- -
VDSS
RDS(on) max.
Pw
3 1
1 2
70 W 620 V < 1.6 Ω 4.2 A 25 W 70 W
TO-220
DPAK
TO-220FP
100% avalanche tested Extremely large avalanche performance Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1.
3 1
3 2
D²PAK
IPAK
Internal schematic diagram
D(2)
Application
Switching applications
Description
These devices are made using the Super MESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ Super MESH™ technology bined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary
Marking Packages D²PAK DPAK TO-220FP TO-220 IPAK Doc ID 17361 Rev 2 Packaging Tape and reel Tape and...
