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STB50N25M5 - N-Channel Power MOSFET

Datasheet Summary

Description

c vertical process technology, which is combined u with STMicroelectronics’ well-known rod PowerMESH™ horizontal layout structure.

Features

  • Type VDSS RDS(on) max ID TAB STB50N25M5 250 V < 0.075 Ω 28 A t(s).
  • Amongst the best RDS(on).
  • area c.
  • High dv/dt capability du.
  • Excellent switching performance ro.
  • Easy to drive P.
  • 100% avalanche tested lete.

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Datasheet preview – STB50N25M5

Datasheet Details

Part number STB50N25M5
Manufacturer STMicroelectronics
File Size 904.77 KB
Description N-Channel Power MOSFET
Datasheet download datasheet STB50N25M5 Datasheet
Additional preview pages of the STB50N25M5 datasheet.

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Full PDF Text Transcription

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STB50N25M5 N-channel 250 V, 0.065 Ω, 28 A, MDmesh™ V Power MOSFET in D²PAK package Datasheet — production data Features Type VDSS RDS(on) max ID TAB STB50N25M5 250 V < 0.075 Ω 28 A t(s) ■ Amongst the best RDS(on)* area c ■ High dv/dt capability du ■ Excellent switching performance ro ■ Easy to drive P ■ 100% avalanche tested lete Application so ■ Switching applications - Ob Description t(s) This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary c vertical process technology, which is combined u with STMicroelectronics’ well-known rod PowerMESH™ horizontal layout structure.
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