• Part: STB50NF25
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 242.47 KB
Download STB50NF25 Datasheet PDF
VBsemi
STB50NF25
FEATURES - Trench FET® Power MOSFETS - 175 °C Junction Temperature - New Low Thermal Resistance Package - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Industrial Ro HS PLIANT D D2PAK (TO-263) GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 m H Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc Operating Junction and Storage Temperature Range TJ, Tstg Limit 250 ± 30 60 35 200 35 61 300b 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB...