STB5N80K5
Features
Order code STB5N80K5
VDS 800 V
RDS(on) max. 1.75 Ω
ID 4A
- Industry’s lowest RDS(on) x area
- Industry’s best Fo M (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code STB5N80K5
Table 1: Device summary
Marking
Package
5N80K5
D²PAK
Packing Tape and reel
May 2016
Doc ID028512 Rev 2
This is information on a product in full production.
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Contents
Contents
1 Electrical...
