• Part: STB50NE10L-T4
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 227.02 KB
Download STB50NE10L-T4 Datasheet PDF
VBsemi
STB50NE10L-T4
FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Surface Mount - Low-Profile Through-Hole - Available in Tape and Reel - Dynamic d V/dt Rating - 150 °C Operating Temperature - Fast Switching - Fully Avalanche Rated - pliant to Ro HS Directive 2002/95/EC D2PAK (TO-263) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc, e TC = 25 °C TA = 25 °C PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L...