STB5NA80
..
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE ST B5NA80 s s s s s s s
V DSS 800 V
R DS(on) < 2.4 Ω
ID 4.7 A s s
TYPICAL RDS(on) = 1.8 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)
3 12
3 1
I2PAK TO-262
D2PAK TO-263
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING INTERNAL SCHEMATIC DIAGRAM . s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
Data Shee
ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM (
- ) P t ot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain...
