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NP15P06SLG
-60V – -15A – P-channel Power MOS FET Application : Automotive
Datasheet
R07DS1508EJ0100 Rev.1.00
Apr. 20, 2022
Description
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance : RDS(on) = 70 m Max. ( VGS = -10 V, ID = -7.5 A ) RDS(on) = 95 m Max. ( VGS = -4.5 V, ID = -7.5 A )
Low input capacitance : Ciss = 1100 pF Typ. Built-in gate protection diode Designed for automotive application and AEC-Q101 qualified. Pb-free (This product does not contain Pb in the external electrode)
Outline
4
Drain
1 2 3 1. Gate 2. Drain 3. Source 4.