NP100P06PDG - P-Channel 60V MOSFET

Datasheet Summary

Features

Trench power MOSFET.
Package with low thermal resistance S G Top View S D G D P-Channel MOSFET.

VBsemi

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Datasheet Details

Part number	NP100P06PDG
Manufacturer	VBsemi
File Size	285.93 KB
Description	P-Channel 60V MOSFET
Datasheet	NP100P06PDG Datasheet
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NP100P06PDG-VB NP100P06PDG-VB Datasheet P-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) -60 0.0050 at VGS = -10 V 0.0070 at VGS = -4.5 V TO-263 ID (A) d -120 FEATURES • Trench power MOSFET • Package with low thermal resistance S G Top View S D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current d (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energy a Power Dissipation L = 0.

Published: Nov 1, 2025 |