NP100P06PDG
FEATURES
- Trench power MOSFET
- Package with low thermal resistance
Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current d (TJ = 175 °C)
TC = 25 °C TC = 125 °C
Pulsed Drain Current
Avalanche Current Single Pulse Avalanche Energy a
Power Dissipation
L = 0.1 m H
TC = 25 °C c TA = 25 °C b
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case
Notes a. Duty cycle ≤ 1 %. b. When mounted on 1" square PCB (FR4 material). c. See SOA curve for voltage derating. d. Limited by package.
PCB mount b
SYMBOL Rth JA Rth JC
LIMIT -60 ± 20 -120 -95 -350 -75 281 375 3.75
-55 to +175
TYPICAL 40 0.4
UNIT V
A m J W °C
UNIT...
