Datasheet4U Logo Datasheet4U.com

NP109N04PUG - N-Channel Power MOSFET

Datasheet Summary

Description

The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A).
  • High current rating ID(DC) = ±110 A (TO-263).

📥 Download Datasheet

Datasheet preview – NP109N04PUG

Datasheet Details

Part number NP109N04PUG
Manufacturer Renesas
File Size 204.66 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NP109N04PUG Datasheet
Additional preview pages of the NP109N04PUG datasheet.

📁 Similar Datasheet

  • NP100P02D6 - 20V P-Channel Enhancement Mode MOSFET (natlinear)
  • NP100P04PDG - MOS FIELD EFFECT TRANSISTOR (NEC)
  • NP100P04PLG - MOS FIELD EFFECT TRANSISTOR (NEC)
  • NP100P06PDG - P-Channel 60V MOSFET (VBsemi)
  • NP100P06PDG - MOS FIELD EFFECT TRANSISTOR (NEC)
  • NP100P06PLG - MOS FIELD EFFECT TRANSISTOR (NEC)
  • NP10C14 - Transient Surge Suppressors (Shindengen Electric)
  • NP120N03D6 - 30V N-Channel Enhancement Mode MOSFET (natlinear)
  • NP12N04ER - 40V N-Channel Enhancement Mode MOSFET (natlinear)
  • NP12N30G - 300V N-Channel Enhancement Mode MOSFET (natlinear)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP109N04PUG-E1-AY Note NP109N04PUG-E2-AY Note Pure Sn (Tin) Tape 800 p/reel Note Pb-free (This product does not contain Pb in external electrode). PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX.
Published: |