NP109N04PUG
DESCRIPTION
The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
NP109N04PUG-E1-AY Note NP109N04PUG-E2-AY Note
Pure Sn (Tin)
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
- Super low on-state resistance
RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A)
- High current rating ID(DC) = ±110 A
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±110 ±440
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch 175
Storage Temperature
Tstg
- 55 to +175
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy...
