NP109N055PUJ
DESCRIPTION
The NP109N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP109N055PUJ-E1B-AY Note NP109N055PUJ-E2B-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 1000 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
- Super low on-state resistance
RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID = 55 A)
- Low input capacitance
Ciss = 6900 p F TYP.
- Designed for automotive application and AEC-Q101 qualified
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±110 ±440
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch 175
Storage Temperature Single Avalanche Energy Note2 Repetitive Avalanche Current...
