NP100P06PDG
DESCRIPTION
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R>
ORDERING INFORMATION
PART NUMBER NP100P06PDG-E1-AY NP100P06PDG-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 800 p/reel
PACKAGE TO-263 (MP-25ZP)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
- Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS =
- 10 V, ID =
- 50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS =
- 4.5 V, ID =
- 50 A)
- High current rating: ID(DC) = m100 A
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
- 60 m20 m100 m300 200 1.8 175
- 55 to +175 64 420
V V A A W W °C °C A m J
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2...
