Datasheet4U Logo Datasheet4U.com

NP100P04PDG - MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 50 A).
  • High current rating: ID(DC) = m100 A (TO-263).

📥 Download Datasheet

Datasheet preview – NP100P04PDG

Datasheet Details

Part number NP100P04PDG
Manufacturer NEC
File Size 210.74 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP100P04PDG Datasheet
Additional preview pages of the NP100P04PDG datasheet.

📁 Similar Datasheet

Other Datasheets by NEC

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P04PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP100P04PDG-E1-AY NP100P04PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.
Published: |