NP100P06PLG Datasheet PDF - Renesas P-channel Power MOSFET Specs

NP100P06PLG - P-channel Power MOSFET

Datasheet Summary

Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ).
Low input capacitance : Ciss = 15000 pF Typ.
Built-in gate protection diode.
Designed for automotive.

Datasheet Details

Part number	NP100P06PLG
Manufacturer	Renesas
File Size	1.32 MB
Description	P-channel Power MOSFET
Datasheet	NP100P06PLG Datasheet
Additional preview pages of the NP100P06PLG datasheet.

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Full PDF Text Transcription

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NP100P06PLG -60V – -100A – P-channel Power MOS FET Application : Automotive Datasheet R07DS1522EJ0100 Rev.1.00 Jun. 24, 2022 Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss = 15000 pF Typ.  Built-in gate protection diode  Designed for automotive application and AEC-Q101 qualified.  Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 12 3 1. Gate 2. Drain 3. Source 4.

Published: Feb 8, 2025 |