NP100N055PUK
Description
The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)
- Low Ciss: Ciss = 4900 p F TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. NP100N055PUK-E1-AY
- 1 NP100N055PUK-E2-AY
- 1
Lead Plating Pure Sn (Tin)
Packing
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note:
- 1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-263 (MP-25ZP)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse)
- 1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Repetitive Avalanche Current
- 2 Repetitive Avalanche Energy
- 2
Tstg...
