NP109N04PUK
Description
The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A)
- Low Ciss: Ciss = 7200 p F TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. NP109N04PUK-E1-AY ∗1 NP109N04PUK-E2-AY ∗1
Lead Plating Pure Sn (Tin)
Tape 800p/reel
Packing Taping (E1 type) Taping (E2 type)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package TO-263 (MP-25ZP)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature
Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR
Ratings 40...
