NP100N04NUJ
Description
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
- Low Ciss: Ciss = 5600 p F TYP. (VDS = 25 V, VGS = 0 V)
- High current rating: ID(DC) = ±100 A
- Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. NP100N04NUJ- S18-AY ∗1
Lead Plating Pure Sn (Tin)
Packing Tube 50 p/tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package TO-262 (MP-25SK) TYP. 1.8g
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature
Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR...
