PTFA082201F, PTFA082201E Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Description

PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 * 894 MHz Descript.
The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band.

📥 Download Datasheet

PTFA082201F Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFA082201F, PTFA082201E. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFA082201F, PTFA082201E
Manufacturer: Infineon ↗
File Size: 372.95 KB
Datasheet: PTFA082201E_Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FETs
Note: This datasheet PDF includes multiple part numbers: PTFA082201F, PTFA082201E.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA082201E Package H-36260-2 PTFA082201F Package H-37260-2 2-Carri

PTFA082201F Distributors

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PTFA082201E Thermally-Enhanced High Power LDMOS FETs Infineon

Infineon PTFA082201F-like datasheet