PTFA180701F, PTFA180701E Thermally-Enhanced High Power RF LDMOS FET

Infineon Technologies

Description

PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 * 1880 MHz www.DataSheet4U.net .
The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band.

📥 Download Datasheet

PTFA180701F Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFA180701F, PTFA180701E. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFA180701F, PTFA180701E
Manufacturer: Infineon ↗ Technologies
File Size: 379.16 KB
Datasheet: PTFA180701E_InfineonTechnologies.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET
Note: This datasheet PDF includes multiple part numbers: PTFA180701F, PTFA180701E.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA180701E Package H-36265-2 PTFA180701F Package H-37265-2 EDGE EVM

PTFA180701F Distributors

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PTFA180701E Thermally-Enhanced High Power LDMOS FET Infineon Technologies

Infineon Technologies PTFA180701F-like datasheet