PTFA181001HL, PTFA181001GL Thermally-Enhanced High Power RF LDMOS FET

Infineon Technologies

Description

Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 * 1.
The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band.

📥 Download Datasheet

PTFA181001HL Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFA181001HL, PTFA181001GL. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFA181001HL, PTFA181001GL
Manufacturer: Infineon ↗ Technologies
File Size: 335.49 KB
Datasheet: PTFA181001GL_InfineonTechnologies.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET
Note: This datasheet PDF includes multiple part numbers: PTFA181001HL, PTFA181001GL.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL
* Package PG-63248-2 PTFA181001HL
* Package PG-642

PTFA181001HL Distributors

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PTFA181001GL Thermally-Enhanced High Power LDMOS FET Infineon Technologies

Infineon Technologies PTFA181001HL-like datasheet