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PTFA181001GL Thermally-Enhanced High Power RF LDMOS FET

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Description

Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 * 1.
The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band.

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Features

* include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL
* Package PG-63248-2 PTFA181001HL
* Package PG-642

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PTFA181001GL Thermally-Enhanced High Power LDMOS FET Infineon Technologies
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