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PTFA041501E Thermally-Enhanced High Power RF LDMOS FETs

PTFA041501E Description

PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 * 500 MHz Descript.
The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.

PTFA041501E Features

* Broadband internal matching Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% Typical CW performance, 470 MHz, 28 V - Output power at P
* 1dB = 175 W - Efficiency = 62% Integrated ESD protection: Human Body Mode

PTFA041501E Applications

* They are available in thermally-enhanced ceramic open-cavity packages . Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA041501E Package H-36248-2 PTFA041501F Package H-37248-2 Single-carrier CDMA IS-95 Performa

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFA041501E-like datasheet