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PTFA043002E Thermally-Enhanced High Power RF LDMOS FETs

PTFA043002E Description

PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 * 860 MHz .
The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadcast, including 8VS.

PTFA043002E Features

* Two-tone Drive-up at 800 MHz (in broadband circuit) VDD = 32 V, IDQ = 1.55 A, 0 -10 -20
* 45 40 Thermally-enhanced package Broadband internal matching Typical 8VSB performance - Average output power = 100 W - Gain = 16 dB - Adjacent <
* 33 dBc Integrated ESD protection: Hu

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Thermally-Enhanced High Power LDMOS FETs Infineon
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