PTFA181001F, PTFA181001E Thermally-Enhanced High Power RF LDMOS FET

Infineon Technologies

Description

PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 * 1880 MHz www.DataSheet4U.net .
The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band.

📥 Download Datasheet

PTFA181001F Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFA181001F, PTFA181001E. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFA181001F, PTFA181001E
Manufacturer: Infineon ↗ Technologies
File Size: 418.90 KB
Datasheet: PTFA181001E_InfineonTechnologies.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET
Note: This datasheet PDF includes multiple part numbers: PTFA181001F, PTFA181001E.
Please refer to the document for exact specifications by model.

Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 2-Carri

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PTFA181001E Thermally-Enhanced High Power LDMOS FET Infineon Technologies

Infineon Technologies PTFA181001F-like datasheet