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PTFA081501F, PTFA081501E Thermally-Enhanced High Power RF LDMOS FETs

PTFA081501F Description

PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 * 900 MHz .
The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications.

PTFA081501F Features

* Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power =

PTFA081501F Applications

* They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA081501E Package H-30248-2 PTFA081501F Package H-31248-2 IS-95 CDMA Perfo

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTFA081501F, PTFA081501E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFA081501F, PTFA081501E
Manufacturer
Infineon ↗
File Size
278.83 KB
Datasheet
PTFA081501E_Infineon.pdf
Description
Thermally-Enhanced High Power RF LDMOS FETs
Note
This datasheet PDF includes multiple part numbers: PTFA081501F, PTFA081501E.
Please refer to the document for exact specifications by model.

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFA081501F-like datasheet