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PTFA082201E Thermally-Enhanced High Power RF LDMOS FETs

PTFA082201E Description

PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 * 894 MHz Descript.
The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band.

PTFA082201E Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA082201E Package H-36260-2 PTFA082201F Package H-37260-2 2-Carri

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFA082201E-like datasheet