Datasheet Specifications
- Part number
- PTFA081501E
- Manufacturer
- Infineon ↗
- File Size
- 278.83 KB
- Datasheet
- PTFA081501E_Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FETs
Description
PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 * 900 MHz .
Features
* Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power =Applications
* They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA081501E Package H-30248-2 PTFA081501F Package H-31248-2 IS-95 CDMA PerfoPTFA081501E Distributors
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