Datasheet4U Logo Datasheet4U.com

PTFA081501E Thermally-Enhanced High Power RF LDMOS FETs

PTFA081501E Description

PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 * 900 MHz .
The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications.

PTFA081501E Features

* Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power =

PTFA081501E Applications

* They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA081501E Package H-30248-2 PTFA081501F Package H-31248-2 IS-95 CDMA Perfo

📥 Download Datasheet

Preview of PTFA081501E PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PTFA - Plug Type Fixed Attenuator (OPLINK)
  • PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001GL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)

📌 All Tags

Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFA081501E-like datasheet