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PTFA080551F, PTFA080551E Thermally-Enhanced High Power RF LDMOS FETs

PTFA080551F Description

PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 * 960 MHz Descripti.
The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band.

PTFA080551F Features

* include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA080551E Package H-36265-2 PTFA080551F Package H-37265-2 Three-carrier CDMA20

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTFA080551F, PTFA080551E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTFA080551F, PTFA080551E
Manufacturer
Infineon ↗
File Size
254.38 KB
Datasheet
PTFA080551E_Infineon.pdf
Description
Thermally-Enhanced High Power RF LDMOS FETs
Note
This datasheet PDF includes multiple part numbers: PTFA080551F, PTFA080551E.
Please refer to the document for exact specifications by model.

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFA080551F-like datasheet