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PTFA080551E Thermally-Enhanced High Power RF LDMOS FETs

PTFA080551E Description

PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 * 960 MHz Descripti.
The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band.

PTFA080551E Features

* include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA080551E Package H-36265-2 PTFA080551F Package H-37265-2 Three-carrier CDMA20

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFA080551E-like datasheet