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FDMS86163P Datasheet, ON Semiconductor

FDMS86163P mosfet equivalent, p-channel mosfet.

FDMS86163P Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 483.62KB)

FDMS86163P Datasheet

Features and benefits


* Max rDS(on) = 22 mW at VGS = −10 V, ID = −7.9 A
* Max rDS(on) = 30 mW at VGS = −6 V, ID = −5.9 A
* Very Low RDS−on Mid Voltage P−Channel Silicon Technology .

Application

As Well As Load Switch Applications
* 100% UIL Tested
* This Device is Pb−Free, Halogen Free/BFR Free and is RoH.

Description

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features
* Max rDS(on) = 22 mW at VGS = −10 V, ID.

Image gallery

FDMS86163P Page 1 FDMS86163P Page 2 FDMS86163P Page 3

TAGS

FDMS86163P
P-Channel
MOSFET
ON Semiconductor

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