FDMS86163P mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 22 mW at VGS = −10 V, ID = −7.9 A
* Max rDS(on) = 30 mW at VGS = −6 V, ID = −5.9 A
* Very Low RDS−on Mid Voltage P−Channel Silicon Technology
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As Well As Load Switch Applications
* 100% UIL Tested
* This Device is Pb−Free, Halogen Free/BFR Free and is RoH.
This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max rDS(on) = 22 mW at VGS = −10 V, ID.
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