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FDMS86103L - N-Channel MOSFET

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Description

Shielded Gate MOSFET Technology Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semicondu

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Part number FDMS86103L
Manufacturer Fairchild Semiconductor
File Size 317.25 KB
Description N-Channel MOSFET
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FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET FDMS86103L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 81 A, 8 mΩ September 2015 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
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