FDMS86103L datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A
* Ad.

Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is .

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