Datasheet Details
| Part number | FDMS86103L |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 317.25 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDMS86103L Datasheet
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| Part number | FDMS86103L |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 317.25 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDMS86103L Datasheet
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Shielded Gate MOSFET Technology Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 10 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized for the on-state resistance and yet maintain superior switching performance.
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