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FDMS86105 - N-Channel MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A Advanced package and silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL teste

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDMS86105 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86105 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 26 A, 34 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A „ Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A „ Advanced package and silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.