FDMS86105
Description
Shielded Gate MOSFET Technology - Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A - Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A - Advanced package and silicon bination for low rDS(on) and high efficiency - MSL1 robust package design - 100% UIL tested - RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
Applications
- Secondary DC-DC
