FDMS86105 N-Channel MOSFET
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A Advanced package an.
Primary DC-DC Secondary DC-DC Load Switch
Top
Bottom
Pin 1
S
S
D
S
S
G
S
D
S
D
D
D D
G
D
D
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