FDMS86105 Description
Shielded Gate MOSFET Technology Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A Advanced package and silicon bination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process...
FDMS86105 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A
- Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A
- Advanced package and silicon bination for low rDS(on) and
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant