FDMS86105 Overview
Key Specifications
Mount Type: Surface Mount
Pins: 8
Height: 1.1 mm
Length: 5 mm
Description
Shielded Gate MOSFET Technology - Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A - Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A - Advanced package and silicon combination for low rDS(on) and high efficiency - MSL1 robust package design - 100% UIL tested - RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
