General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A
* Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A
* Adv.

* Primary DC-DC
* Secondary DC-DC
* Load Switch Top Bottom Pin 1 S S D S S G S D S D D D D G.

* Shielded Gate MOSFET Technology
* Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A
* Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A
* Advanced package and silicon combination for low rDS(on) and high efficiency
* MSL1 robust package d.

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