logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

FDMS86102LZ Fairchild Semiconductor

FDMS86102LZ N-Channel MOSFET

FDMS86102LZ Avg. rating / M : star-12

datasheet Download

FDMS86102LZ Datasheet

Features and benefits

General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A „ HBM ESD protectio.

Application

„ DC - DC Conversion „ Inverter „ Synchronous Rectifier Top Bottom Pin 1 S S D S S G S D Power 56 D D D D.

Image gallery

FDMS86102LZ FDMS86102LZ FDMS86102LZ

TAGS
FDMS86102LZ
N-Channel
MOSFET
FDMS86101
FDMS86101A
FDMS86101DC
Fairchild Semiconductor
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy