FDMS86102LZ N-Channel MOSFET
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A HBM ESD protectio.
DC - DC Conversion
Inverter
Synchronous Rectifier
Top
Bottom
Pin 1
S
S
D
S
S
G
S
D
Power 56
D D D D.
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