Datasheet Details
| Part number | FDMS86102LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 349.75 KB |
| Description | N-Channel MOSFET |
| Download | FDMS86102LZ Download (PDF) |
|
|
| Part number | FDMS86102LZ |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 349.75 KB |
| Description | N-Channel MOSFET |
| Download | FDMS86102LZ Download (PDF) |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A HBM ESD protection level > 6 KV typical (Note 4) 100% UIL Tested RoHS Compliant This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 22 A, 25.
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|---|---|
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| FDMS86105 | N-Channel MOSFET |
| FDMS86150 | N-Channel MOSFET |
| FDMS86150ET100 | MOSFET |
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