FDMS86102LZ Fairchild Semiconductor

General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A „ HBM ESD protectio.

„ DC - DC Conversion „ Inverter „ Synchronous Rectifier Top Bottom Pin 1 S S D S S G S D Power 56 D D D D.