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FDMS86150 - N-Channel MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL te

Key Features

  • General.

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FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 80 A, 4.85 mΩ March 2015 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A „ Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.