FDMS86150 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
* Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
* .

Application

* Primary DC-DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch Top Bottom S Pin 1 S D Pin 1 .

Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
* Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* MSL1 robust packag.

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