Datasheet Details
| Part number | FDMS86101A |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 335.59 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86101A_FairchildSemiconductor.pdf |
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Overview: FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 60 A, 8 mΩ October.
| Part number | FDMS86101A |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 335.59 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86101A_FairchildSemiconductor.pdf |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MSL1 robust package design 100% UIL tested 100% Rg tested Application DC-DC Conversion RoHS Compliant Top Pin 1 Bottom Pin 1 S S D S S G S D Power 56 D D D D S D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 100 ±20 60 13 180 486 104 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.2 (Note 1a) 50 °C/W Device Marking FDMS86101A Device FDMS86101A Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDMS86101A Rev.C2 www.fairchildsemi.com FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperatur
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDMS86101 | N-Channel MOSFET | ON Semiconductor |
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FDMS86101DC | N-Channel MOSFET | ON Semiconductor |
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