General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A
* A.

* Shielded Gate MOSFET Technology
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is.

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