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FDMS86101A - N-Channel MOSFET

Description

Shielded Gate MOSFET Technology Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semicond

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Datasheet Details

Part number FDMS86101A
Manufacturer Fairchild Semiconductor
File Size 335.59 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS86101A Datasheet
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FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET FDMS86101A N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 60 A, 8 mΩ October 2014 Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 13.5 mΩ at VGS = 6 V, ID = 9.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
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