Datasheet Summary
FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET
October 2014
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 16 A, 24 mΩ
Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
- MSL1 robust package design
- 100% UIL tested
- RoHS...