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FDMS86104 - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

MSL1 robust package design 100

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A.
  • Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86104 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 16 A, 24 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.