FDMS86104 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
FDMS86104 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 39 mΩ at VGS = 6 V, ID = 5.5 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
- DC-DC Conversion
- 55 to +150