* Dual CoolTM Top Side Cooling PQFN package
* Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A
* Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A
* High perfo.

* Primary DC-DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch D D D D S S D D D D Pin 1 S G .

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching p.

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