FDMS86101DC
FDMS86101DC is N-Channel MOSFET manufactured by onsemi.
MOSFET
- N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate
100 V, 60 A, 7.5 mW
General Description This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction- to- Ambient thermal resistance.
Features
- Shielded Gate MOSFET Technology
- DUAL COOL Top Side Cooling PQFN package
- Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A
- Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A
- High performance technology for extremely low RDS(on)
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