FDMS86101 datasheet, mosfet equivalent, Fairchild Semiconductor

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General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
* Max rDS(on) = 8 mΩ at VGS .

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