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FDMS86163P - P-Channel MOSFET

General Description

This P Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Key Features

  • Max rDS(on) = 22 mW at VGS =.
  • 10 V, ID =.
  • 7.9 A.
  • Max rDS(on) = 30 mW at VGS =.
  • 6 V, ID =.
  • 5.9 A.
  • Very Low RDS.
  • on Mid Voltage P.
  • Channel Silicon Technology Optimised for Low Qg.
  • This Product is Optimised for Fast Switching.

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📁 Similar Datasheet

Part Number Description Manufacturer
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH) -100 V, -50 A, 22 mW FDMS86163P General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max rDS(on) = 22 mW at VGS = −10 V, ID = −7.9 A • Max rDS(on) = 30 mW at VGS = −6 V, ID = −5.