FDMS86101 mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A
* Max RDS(on) = 13.5 mW at VGS = 6 V, ID = 9.5 A
* Advanced Package and Silicon Combination for Low RDS(on) and
.
* DC−DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to .
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max RDS(on) = 8 mW at VGS = 10 V, ID .
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