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FDMS86101 - N-Channel MOSFET

Datasheet Summary

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Features

  • Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A.
  • Max RDS(on) = 13.5 mW at VGS = 6 V, ID = 9.5 A.
  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • 100% Rg Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FDMS86101

Datasheet Details

Part number FDMS86101
Manufacturer ON Semiconductor
File Size 469.98 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS86101 Datasheet
Additional preview pages of the FDMS86101 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. Features • Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max RDS(on) = 13.5 mW at VGS = 6 V, ID = 9.
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