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FDMS86101 - N-Channel MOSFET

FDMS86101 Description

MOSFET * N-Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that has been especially tailored to minimize the on. st.

FDMS86101 Features

* Max RDS(on) = 8 mW at VGS = 10 V, ID = 13 A
* Max RDS(on) = 13.5 mW at VGS = 6 V, ID = 9.5 A
* Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
* MSL1 Robust Package Design
* 100% UIL Tested
* 100% Rg Tested
* Thes

FDMS86101 Applications

* DC
* DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current: Continuous, TC = 25°C Continuous, TA = 25°C (Note 1a) Pulsed 100 V ±20 V A 60 12.4 200 EAS Singl

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N-Channel MOSFET ON Semiconductor
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