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FDMS86200 - N-Channel MOSFET

Description

This N

POWERTRENCH® process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A.
  • Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A.
  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • RoHS Compliant.

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Datasheet Details

Part number FDMS86200
Manufacturer onsemi
File Size 478.46 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS86200 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 35 A, 18 mW FDMS86200 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A • Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.
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