* Shielded Gate MOSFET Technology
* Max RDS(on) = 18 mW at VGS = 10 V, ID = 9.6 A
* Max RDS(on) = 21 mW at VGS = 6 V, ID = 8.8 A
* Advanced Package and Si.

* DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain t.

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features
* Shi.

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