INCHANGE 2SD Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor 2SD313 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Vol

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isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD130 DESCRIPTION ·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown Volt

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0 (Max)@ IC= 2.5A ·High Power Dissipation- : PC= 25W@ T

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isc Silicon NPN Power Transistor DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in da

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1113 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·High fT：fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage- : V(BR

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isc Silicon NPN Power Transistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2102 DESCRIPTION ·Collector-Emitter Breakdown Voltag

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2118 DESCRIPTION ·High current capacity ·Small and slim package making it easy to make 2S

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 2000

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Vol

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCE

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isc Silicon NPN Power Transistor DESCRIPTION ·High speed. ·High breakdown voltage(VCBO=1500V). ·High reliability(Adoption of HVP process). ·Minimum L

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isc Silicon NPN Power Transistor 2SD311 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed ·Minim

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1801 DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making i

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1802 DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making i

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1760 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Comple

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 DESCRIPTION ·High DC Current Gain- : hFE = 4000(Min)@ IC= 1A ·Collector-

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1816 DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compact

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